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The spectrum of low-level photon emissions caused by semiconductor crystal grid defects matches exactly the most sensitive realm of SWIR cameras fitted with thermoelectrically cooled InGaAs- or HgCdTe area sensors. Such sensors are therefore well suited for failure analysis and quality assurance tasks in semiconductor manufacturing. The positive results of these procedures can be successfully migrated to the economical characterization of nano-technology devices.
Download article: Successful semiconductor inspection with infrared imaging